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Proceedings Paper

Photoluminescence of porous silicon by pulse exitation
Author(s): A. V. Andrianov; Dmitri I. Kovalev; V. B. Shuman; Ilya D. Yaroshetskii
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Paper Abstract

Strong time evolution of the porous silicon photoluminescence (PL) spectrum was first found and investigated. Two radiation bands were demonstrated under pulse optical excitation.

Paper Details

Date Published: 19 November 1993
PDF: 5 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162796
Show Author Affiliations
A. V. Andrianov, A.F. Ioffe Physical-Technical Institute (Russia)
Dmitri I. Kovalev, A.F. Ioffe Physical-Technical Institute (Russia)
V. B. Shuman, A.F. Ioffe Physical-Technical Institute (Russia)
Ilya D. Yaroshetskii, A.F. Ioffe Physical-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II
Fabio Beltram; Erich Gornik, Editor(s)

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