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Proceedings Paper

Picosecond signal recovery of type II tunneling bi-quantum-well etalon in all-optical gate operation
Author(s): Atsushi Tackeuchi; Tsuguo Inata; Yoshiki Nakata; Satoshi Nakamura; Yoshihiro Sugiyama; Shunichi Muto
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Paper Abstract

We demonstrate picosecond signal recovery in all optical gate operation using a type II tunneling bi-quantum well (TBQ) etalon. Type II TBQ consists of a series of GaAs wells, AlGaAs barriers, and AlAs layers. The recovery time from excitonic absorption bleaching in GaAs wells is governed by tunneling of electrons out of the well through AlGaAs barriers into AlAs layers. The type-II TBQ etalon with 1.7 nm barriers shows 17 ps-recovery.

Paper Details

Date Published: 19 November 1993
PDF: 4 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162795
Show Author Affiliations
Atsushi Tackeuchi, Fujitsu Labs., Ltd. (Japan)
Tsuguo Inata, Fujitsu Labs., Ltd. (Japan)
Yoshiki Nakata, Fujitsu Labs., Ltd. (Japan)
Satoshi Nakamura, Fujitsu Labs., Ltd. (Japan)
Yoshihiro Sugiyama, Fujitsu Labs., Ltd. (Japan)
Shunichi Muto, Fujitsu Labs., Ltd. (Japan)

Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II
Fabio Beltram; Erich Gornik, Editor(s)

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