Share Email Print
cover

Proceedings Paper

Porous silicon and its application for light emitting diodes
Author(s): Lorenzo Pavesi; G. Mariotto; O. Bisi; Markus Anderle; L. Calliari
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Through anodically etching p-type Silicon in an ethanoic solution of HF, we prepared several porous samples whose physical properties have been investigated by different techniques, including photoluminescence, Raman scattering, Auger spectroscopy, secondary ion mass spectrometry, scanning electron microscopy and transmission electron microscopy. Schottky contacts on the porous surfaces have been deposited using different metals (Au, W, Ti and Al). In this way light emitting diodes have been obtained in the visible region. The performance and stability of the structures as well as the changes in the physical properties after the operation of the devices have been investigated. From the characterization of the physical properties and the behavior of the light emitting diodes a schematic band diagram of metal-p-Si structure is proposed and discussed. A tentative explanation of the different luminescence quantum efficiencies observed in p-Si for different excitation mechanism is given.

Paper Details

Date Published: 19 November 1993
PDF: 12 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162794
Show Author Affiliations
Lorenzo Pavesi, Univ. di Trento (Italy)
G. Mariotto, Univ. di Trento (Italy)
O. Bisi, Univ. di Trento (Italy)
Markus Anderle, Istituto per la Ricerca Scientifica e Tecnologica (Italy)
L. Calliari, Istituto per la Ricerca Scientifica e Tecnologica (Italy)


Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II
Fabio Beltram; Erich Gornik, Editor(s)

© SPIE. Terms of Use
Back to Top