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Proceedings Paper

Performances presented by a position-sensitive detector based on amorphous silicon technology
Author(s): Elvira Fortunato; Manuela Vieira; Carlos N. Carvalho; Guilherme Lavareda; Rodrigo Martins; Fernando Soares; Luis Alberto Almeida Ferreira
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Paper Abstract

A rectangular dual-axis large area position sensitive detector (PSD), with 5 cm X 5 cm detection area, has been developed by using a hydrogenated amorphous silicon (a-Si:H) PIN photodiode produced by plasma enhanced chemical vapor deposition (PECVD). The requirements needed for the fabrication of these devices are the thickness uniformity of the different layers, the geometry, and the contacts location. In this paper we present results on PSD with special emphasis on the linearity as well as on its response time.

Paper Details

Date Published: 19 November 1993
PDF: 10 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162793
Show Author Affiliations
Elvira Fortunato, Univ. Nova de Lisboa (Portugal)
Manuela Vieira, Univ. Nova de Lisboa (Portugal)
Carlos N. Carvalho, Univ. Nova de Lisboa (Portugal)
Guilherme Lavareda, Univ. Nova de Lisboa (Portugal)
Rodrigo Martins, Univ. Nova de Lisboa (Portugal)
Fernando Soares, Univ. Nova de Lisboa (Portugal)
Luis Alberto Almeida Ferreira, EID (Portugal)

Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II
Fabio Beltram; Erich Gornik, Editor(s)

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