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Proceedings Paper

Two-dimensional photodetector with the light-controlled area of photosensitivity
Author(s): Andrei V. Kichaev; Peter G. Kasherininov; Sergey Yu. Kuzmin; Aleksey V. Klementiev; Ilya D. Yaroshetskii
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Paper Abstract

A new type of semiconductor photosensor has been suggested and designed. Its major feature is that the size and configuration of the photosensitive region on the working surface, as well as the value of its photosensitivity to registered light, are governed by control light flux. This allows us to use the new device in optical data processing systems for various important fields, such as image signal forming, determination of light spot center position, and others. The photodetector is based on a new effect of photoinduced reversible local electric field redistribution due to the space charge of free photocarriers. On the basis of field redistribution measurements the suitable semiconductor structures were found and the first samples of the light controlled photodetector were realized. They have demonstrated rather high detectability at the control light intensity about 10-2 W/cm2, spatial resolution up to 5 lines/mm, and speed of 105 cycles/s.

Paper Details

Date Published: 19 November 1993
PDF: 5 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162791
Show Author Affiliations
Andrei V. Kichaev, A.F. Ioffe Physical-Technical Institute (Russia)
Peter G. Kasherininov, A.F. Ioffe Physical-Technical Institute (Russia)
Sergey Yu. Kuzmin, A.F. Ioffe Physical-Technical Institute (Russia)
Aleksey V. Klementiev, A.F. Ioffe Physical-Technical Institute (Russia)
Ilya D. Yaroshetskii, A.F. Ioffe Physical-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II
Fabio Beltram; Erich Gornik, Editor(s)

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