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Proceedings Paper

High-detectivity 8~12-μm GaAs multi-quantum-well infrared photodetectors
Author(s): Zhenghao Chen; Junming Zhou; Defu Cai; Qiang Hu; Huibin Lu; Guozhen Yang
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Paper Abstract

Using 45 degree(s) geometry or grating for optical coupling, three kinds of GaAs/AlxGa1-xAs multiquantum well (MQW) photodetectors having different response range, i.e., 7.50 - 8.85, 8.20 - 9.80, and 9.60 - 11.40 micrometers , have been fabricated and evaluated. High responsivity Rp > 1 X 105 V/W, high quantum efficiency (eta) > 14%, and high detectivity D(lambda )* > 3 X 1010 cmHz1/2/W, were achieved at T equals 77 K.

Paper Details

Date Published: 19 November 1993
PDF: 5 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162786
Show Author Affiliations
Zhenghao Chen, Institute of Physics (China)
Junming Zhou, Institute of Physics (China)
Defu Cai, Institute of Physics (China)
Qiang Hu, Institute of Physics (China)
Huibin Lu, Institute of Physics (China)
Guozhen Yang, Institute of Physics (China)


Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II
Fabio Beltram; Erich Gornik, Editor(s)

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