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Proceedings Paper

IV-VI on fluoride/Si structures for IR-sensor-array applications
Author(s): Alexander Fach; Clau Maissen; Jiri Masek; Stefan I. Teodoropol; Hans Zogg; Harald Boettner
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Paper Abstract

Epitaxial narrow gap IV-VI layers on Si-substrates offer an alternate to Hg1-xCdxTe for infrared-focal plane arrays (IRFPA) with similar ultimate sensitivities. We report on the following improvements in reaching the goal of an easily producible fully monolithic IV- VI-on-active-Si IR-FPA: (1) Up to now, compatibility with the Si-substrate was reached through use of a stacked CaF2/BaF2 buffer layer, this layer is replaced by a very thin CaF2 buffer only, which is more suitable for photolithographic processing; (2) fine resolution wet etching of the IV-VI layers is much easier and reproducible with this new type of buffer; and (3) etching of the surface was found to improve the behavior of the blocking Pb-contact towards better I-V characteristics.

Paper Details

Date Published: 19 November 1993
PDF: 6 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162784
Show Author Affiliations
Alexander Fach, Swiss Federal Institute of Technology (Switzerland)
Clau Maissen, Swiss Federal Institute of Technology (Switzerland)
Jiri Masek, Swiss Federal Institute of Technology (Switzerland)
Stefan I. Teodoropol, Swiss Federal Institute of Technology (Switzerland)
Hans Zogg, Swiss Federal Institute of Technology (Switzerland)
Harald Boettner, Fraunhofer-Institut fuer Physikalische Messtechnik (Germany)


Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II
Fabio Beltram; Erich Gornik, Editor(s)

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