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Proceedings Paper

Improved photoresponse in nipi structures
Author(s): Manfred Pippan; Josef Oswald
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Paper Abstract

One of the most interesting effects of nipi structures is the lifetime enhancement of excess carriers due to the built in bandedge modulation which separates the optically generated e-h- pairs in space and finally leads to an enhancement of the response. However, the lifetime enhancement generally slows down the detector speed. We present a nipi based detector concept which takes advantage of the enhanced response, but at the same time allows us to reduce the response time far below the characteristic lifetime in such structures. The physical background of the concept is presented in a theoretical model which can be understood in terms of the enhanced ambipolar diffusion and the local control of the balance of carrier generation and recombination by applying a lateral external current between two selective contacts. Results of numerical simulations are compared to experimental data obtained from selectively contacted PbTe single period (p-n-p) nipi-structures.

Paper Details

Date Published: 19 November 1993
PDF: 10 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162782
Show Author Affiliations
Manfred Pippan, Montanuniv. Leoben (Austria)
Josef Oswald, Montanuniv. Leoben (Austria)

Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II
Fabio Beltram; Erich Gornik, Editor(s)

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