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Proceedings Paper

Vacuum electroreflectance, electrolyte electroreflectance, and photoreflectance study of highly doped GaAs
Author(s): Silvia L. Mioc; Zhijie Zhang; James W. Garland; Paul M. Raccah
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Paper Abstract

Electroreflectance (ER) is a modulation technique which measures the change in reflectance of a semiconductor when an electric field is applied. Vacuum electroreflectance (VER), a new way of performing the experiment without making contact to the front surface of the sample, is briefly described. Gallium arsenide samples with carrier concentrations >= 1017 cm-3 were studied by VER, electrolyte electroreflectance (EER), and photoreflectance (PR). Spectra obtained by these three techniques are compared, as are the results of fitting a new high-field ER theory to these spectra.

Paper Details

Date Published: 19 November 1993
PDF: 7 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162779
Show Author Affiliations
Silvia L. Mioc, Univ. of Illinois/Chicago (United States)
Zhijie Zhang, Univ. of Illinois/Chicago (United States)
James W. Garland, Univ. of Illinois/Chicago (United States)
Paul M. Raccah, Univ. of Illinois/Chicago (United States)

Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II
Fabio Beltram; Erich Gornik, Editor(s)

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