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Proceedings Paper

Spectroscopic ellipsometry characterisatiion of strained Si1-xGex multi-quantum wells for optoelectronic applications
Author(s): Christopher Pickering; Roger Timothy Carline; David J. Robbins; Weng Y. Leong; Anthony D. Pitt; Anthony G. Cullis
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Paper Abstract

Spectroscopic ellipsometry has been used to determine composition and thicknesses of pseudo- morphic Si/Si1-xGex multilayer structures. The effects of composition, strain, and quantum confinement on dielectric functions have been determined. The technique has been used to assess multi-quantum well structures with well thicknesses down to 20 angstroms.

Paper Details

Date Published: 19 November 1993
PDF: 12 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162778
Show Author Affiliations
Christopher Pickering, Defence Research Agency (United Kingdom)
Roger Timothy Carline, Defence Research Agency (United Kingdom)
David J. Robbins, Defence Research Agency (United Kingdom)
Weng Y. Leong, Defence Research Agency (United Kingdom)
Anthony D. Pitt, Defence Research Agency (United Kingdom)
Anthony G. Cullis, Defence Research Agency (United Kingdom)


Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II
Fabio Beltram; Erich Gornik, Editor(s)

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