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Proceedings Paper

Electro-optical modulation in silicon-silicon/germanium quantum-well structures
Author(s): Lionel R. Friedman; Richard A. Soref
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Paper Abstract

A new, fast, intersubband 1.55 micrometers electro-optic modulator in the SiGe/Si/CaF2-on- Si stepped-quantum-well system is proposed and analyzed. At applied electric fields of +/- 8 V/micrometers , resonant 1 - 3 conduction-intersubband absorption is predicted to given 18 dB of optical extinction for narrow-linewidth transitions. The procedure for incorporating conduction band nonparobolicity for higher lying subbands is described, and the issue of narrow linewidths is discussed.

Paper Details

Date Published: 19 November 1993
PDF: 9 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162773
Show Author Affiliations
Lionel R. Friedman, Rome Lab. (United States)
Richard A. Soref, Rome Lab. (United States)


Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II
Fabio Beltram; Erich Gornik, Editor(s)

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