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Proceedings Paper

Scaling-law anomaly and band-structure-enhanced optical nonlinearities in semiconductor superlattices
Author(s): Milan Jaros; Mike J. Shaw
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Paper Abstract

We show that there is a well defined class of semiconductor heterostructures (e.g., GaSb- InAs-AlSb, CdHgTe-CdTe) which do not obey the universal scaling law valid for below band gap excitations in bulk insulators and semiconductors. The magnitude, and the frequency at which the third order susceptibility changes its sign, are tunable over a range of energies spanning a significant fraction of the band gap, and reflect the separation in energy and the character of the dispersion in momentum space of higher lying minibands. The role of the microscopic (e.g., band structure) effects is also demonstrated in the range of photon energies capable of generating optical nonlinearities in the mid and far infrared, e.g., via excitations between valence minibands in p-type GaAs-AlAs quantum well structures.

Paper Details

Date Published: 19 November 1993
PDF: 8 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162770
Show Author Affiliations
Milan Jaros, Univ. of Newcastle upon Tyne (United Kingdom)
Mike J. Shaw, Univ. of Newcastle upon Tyne (United Kingdom)


Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II
Fabio Beltram; Erich Gornik, Editor(s)

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