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Proceedings Paper

Multiwavelength ellipsometry at strained Si1-xGex layers on Si substrate
Author(s): Marita Weidner; Michael Eichler; Peter Paduschek
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Paper Abstract

Rapid characterization of thin epitaxial Si1-xGex layers on silicon substrate was made by multi-wavelength ellipsometry. Si1-xGe layers were deposited by chemical vapor deposition in an atmospheric pressure reactor at 700 degree(s)C. A thickness variation of these strained thin layers (20 to 80 nm) was generated for different germanium contents in the range of 0.10 < X < 0.22. For ellipsometrical measurements a PLASMOS-ellipsometer SD 2000 at an incident angle of 70 degree(s) at different wavelengths was used. Theoretical simulations for measured ellipsometrical angles (Psi) and (Delta) and an iteration procedure were achieved to estimate the refractive index and thickness of Si1-xGex layers on silicon substrate. The compositions are obtained by x-ray double crystal diffractometry to provide a correlation to ellipsometrical measurements. Stress in the thin layers is determined by Raman line shift. We found a relation between the real part of the refractive index of Si1-xGex layers and the Ge-content in these layers at the wavelengths of 632.8 nm and 785 nm.

Paper Details

Date Published: 19 November 1993
PDF: 6 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162769
Show Author Affiliations
Marita Weidner, Institut fuer Halbleiterphysik (Germany)
Michael Eichler, Institut fuer Halbleiterphysik (Germany)
Peter Paduschek, PLASMOS GmbH (Germany)


Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II
Fabio Beltram; Erich Gornik, Editor(s)

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