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Proceedings Paper

Errors in the determination by HREM of steps at AlAs/GaAs interfaces
Author(s): Sergio I. Molina; Francisco J. Pacheco; Rafael Garcia
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Paper Abstract

A systematic study of HREM images of AlAs/GaAs interfaces is presented. Special attention has led to the possibility of identifying steps at these types of interfaces. It is demonstrated that if a monolayer with a disordered alloy composition (AlxGa1-xAs exists between AlAs and GaAs, very small changes in the specimen thickness lead to contrasts which are similar to those originated for the existence of interfacial steps. A more detailed analysis than the visual inspection of the HREM images is required in order to get conclusions in relation to the presence of steps. The use of integrated profiles is a useful way to carry out this kind of analysis.

Paper Details

Date Published: 19 November 1993
PDF: 10 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162768
Show Author Affiliations
Sergio I. Molina, Univ. de Cadiz (Spain)
Francisco J. Pacheco, Univ. de Cadiz (Spain)
Rafael Garcia, Univ. de Cadiz (Spain)


Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II
Fabio Beltram; Erich Gornik, Editor(s)

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