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Proceedings Paper

Fast optical addressing using plasma gratings stabilized by deep centers in semiconductors
Author(s): N. Gouaichault-Brugel; Laurent Nardo; Michel Pugnet; Jacques H. Collet; J. L. Iehl; R. Grac
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Paper Abstract

We study the subnanosecond optical addressing capabilities of semiconductors based on the diffraction properties of plasma index gratings. We use degenerate four-wave mixing experiments at 1.06 micrometers . The diffraction efficiency of the refractive index grating remains constant ((eta) equals 5 X 10-4) in the nanosecond time scale. The grating erasure is possible however using a uniform picosecond illumination: an 80% decrease of the diffraction efficiency is achieved with only 25% of the writing energy. We show that the best model to explain our experimental results is based on the plasma density modulation stabilized by charged deep centers via the electrostatic screening effect.

Paper Details

Date Published: 19 November 1993
PDF: 12 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162767
Show Author Affiliations
N. Gouaichault-Brugel, UPS/INSA (France)
Laurent Nardo, UPS/INSA (France)
Michel Pugnet, UPS/INSA (France)
Jacques H. Collet, UPS/INSA (France)
J. L. Iehl, UPS/INSA (France)
R. Grac, UPS/INSA (France)

Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II
Fabio Beltram; Erich Gornik, Editor(s)

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