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Proceedings Paper

Nonequilibrium charge carriers recombination, diffusion peculiarities, and bleaching in InGaAs(P) epitaxial layers
Author(s): Mindaugas Petrauskas; Saulius Juodkazis; Magnus Willander; Aziz Quacha
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Paper Abstract

The method of picosecond laser induced grating (LIG) was used for investigation of non- equilibrium charge carriers (NCC) dynamics in the epitaxial layers of InGaAsP and InGaAs. The carriers recombination time (tau) R and diffusion coefficient Da have been determined. The influence of bleaching on the revealed values is discussed.

Paper Details

Date Published: 19 November 1993
PDF: 5 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162765
Show Author Affiliations
Mindaugas Petrauskas, Vilnius Univ. (Lithuania)
Saulius Juodkazis, Vilnius Univ. (Lithuania)
Magnus Willander, Linkoping Univ. (Sweden)
Aziz Quacha, Linkoping Univ. (Sweden)


Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II
Fabio Beltram; Erich Gornik, Editor(s)

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