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Proceedings Paper

Defect characterization of GaAs/InP layers and MESFETs devices by admittance and photoluminescence spectroscopies
Author(s): A. Ben Hamida; Georges E. Bremond; M. A. Garcia Perez; Gerard Guillot; Rozette Azoulay; Mourad Chertouk; A. Clei
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Paper Abstract

GaAs layers as well as GaAs MESFET devices on InP are studied by means of DLTS and PL spectroscopies. We correlate the compensation observed on the Si-n-doped GaAs layers to the incorporation of Si that moves from a SiGa donor site to form a complex defect involving Si and As or Ga vacancies. A study of defects on MESFETs grown with various buffer layer thicknesses shows that the thicker this layer is the higher is the defect concentration. This behavior is assumed to be related to the compensation effect.

Paper Details

Date Published: 19 November 1993
PDF: 9 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162764
Show Author Affiliations
A. Ben Hamida, INSA de Lyon (France)
Georges E. Bremond, INSA de Lyon (France)
M. A. Garcia Perez, INSA de Lyon (France)
Gerard Guillot, INSA de Lyon (France)
Rozette Azoulay, CNET (France)
Mourad Chertouk, CNET (France)
A. Clei, CNET (France)


Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II
Fabio Beltram; Erich Gornik, Editor(s)

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