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Proceedings Paper

Hot-electron-induced light emission and impact ionization in GaAs-based devices
Author(s): Carlo Tedesco; Claudio Canali; Manfredo Manfredi; Andrea Neviani; Enrico Zanoni
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Paper Abstract

In this paper, we characterize impact ionization effects in GaAs MESFETs, in AlGaAs/GaAs High Electron Mobility Transistors, HEMTs, in AlGaAs/InGaAs Pseudo-Morphic High Electron Mobility Transistors, PM-HEMTs, and AlGaAs/GaAs Heterojunction Bipolar Transistors, HBTs. Then, we correlate impact ionization and electroluminescence in each type of device, providing a deeper insight into the mechanisms responsible for the emission of photons in the high electric field regime. Finally, conclusions follow in Section 4.

Paper Details

Date Published: 19 November 1993
PDF: 12 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162763
Show Author Affiliations
Carlo Tedesco, Univ. di Padova (Italy)
Claudio Canali, Univ. di Modena (Italy)
Manfredo Manfredi, Univ. di Parma (Italy)
Andrea Neviani, Univ. di Padova (Italy)
Enrico Zanoni, Univ. di Padova (Italy)


Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II
Fabio Beltram; Erich Gornik, Editor(s)

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