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Proceedings Paper

Light emission from hot carriers in polar semiconductor devices
Author(s): Paolo Lugli; Aldo Di Carlo; Peter Vogl; G. Zandler
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Paper Abstract

We present a theoretical study of hot-carrier induced light emission in III-V semiconductor devices. Carrier heating under the intense electric fields present under high bias conditions are studied via a selfconsistent Monte Carlo simulation. The carrier distribution functions obtained from the simulation are then incorporated into a pseudo-potential algorithm that describes the direct optical transitions and calculates the corresponding spectra. We show that the light emission due to hot carriers is dominated by direct radiative interband transitions within the conduction and valence bands. Good agreement between theory and experiment is obtained for GaAs MESFET and GaAs/AlGaAs HBTs.

Paper Details

Date Published: 19 November 1993
PDF: 12 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162762
Show Author Affiliations
Paolo Lugli, Univ. di Roma "Tor Vergata" (Italy)
Aldo Di Carlo, Technische Univ. Muenchen (Germany)
Peter Vogl, Technische Univ. Muenchen (Germany)
G. Zandler, Technische Univ. Muenchen (Germany)


Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II

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