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Proceedings Paper

Influence of growth rate on the dopant confinement in delta-doped GaAs epitaxial layers grown by low-pressure metal organic vapor phase epitaxy
Author(s): G. Li; Chennupati Jagadish; Andrew Clark; C. A. Larsen; N. Hauser
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Paper Abstract

In this paper, the influence of growth rate on the dopant confinement of silicon delta-doped GaAs epitaxial layers grown by low pressure metal organic vapor phase epitaxy (LP-MOVPE) was studied in detail. It was found that the growth rate influences the dopant confinement of Si delta-doped GaAs layers in the case of low silane flows. In contrast, at higher silane flows, growth rate has very little effect on the carrier confinement. The Si delta-doped GaAs layers with very good confinement and high sheet carrier concentration have been achieved under optimal conditions of LP-MOVPE.

Paper Details

Date Published: 19 November 1993
PDF: 6 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162761
Show Author Affiliations
G. Li, Australian National Univ. (Australia)
Chennupati Jagadish, Australian National Univ. (Australia)
Andrew Clark, Australian National Univ. (Australia)
C. A. Larsen, Australian National Univ. (Australia)
N. Hauser, Australian National Univ. (Australia)


Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II

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