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Proceedings Paper

Tuning heterojunction band offsets by interface δ-doping
Author(s): Sandro Scandolo; Alfonso Baldereschi
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Paper Abstract

The band offset at semiconductor heterojunctions is shown to be extremely sensitive to the presence at the interface of a delta-doping layer with sheet density much smaller than that of a full monolayer. Different models are analyzed in the effective-mass approximation in order to cover the full range of densities, from the low-density isolated-impurity picture to the high- density Thomas-Fermi description. Predictions for realistic Al0.3Ga0.7As/GaAs structures are given.

Paper Details

Date Published: 19 November 1993
PDF: 8 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162760
Show Author Affiliations
Sandro Scandolo, IRRMA (Switzerland) and Scuola Internazionale Superiore di Avanzati (Italy)
Alfonso Baldereschi, IRRMA (Switzerland) and Univ. di Trieste (Italy)


Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II
Fabio Beltram; Erich Gornik, Editor(s)

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