Share Email Print
cover

Proceedings Paper

Nonlinear optical phenomena and lasing in semiconductor quantum dots and wires
Author(s): V. S. Dneprovskii; V. A. Karavanskii; Victor I. Klimov; D. K. Okorokov; Yu. V. Vandyshev
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Transmission spectra recovery of CdSe, CdSxSe1-x nanocrystals and porous silicon wires optically excited by ultrashort laser pulses have been studied with picosecond time resolution using pump and probe technique. The transitions between levels of electrons and holes spatially confined within nanocrystals and thin wires were observed as bleaching bands in nonlinear transmission spectra (saturation effect). Spectra and values of third order resonant susceptibility were determined for nanocrystals of different size and porous silicon using the experimentally measured differential transmission spectra.

Paper Details

Date Published: 19 November 1993
PDF: 12 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162756
Show Author Affiliations
V. S. Dneprovskii, Moscow State Univ. (Russia)
V. A. Karavanskii, Institute for General Physics (Russia)
Victor I. Klimov, Moscow State Univ. (Russia)
D. K. Okorokov, Moscow State Univ. (Russia)
Yu. V. Vandyshev, Moscow State Univ. (Russia)


Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II
Fabio Beltram; Erich Gornik, Editor(s)

© SPIE. Terms of Use
Back to Top