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Proceedings Paper

Demonstration of low-power nonlinearity in InGaAs/InP multiple-quantum-well waveguides
Author(s): Domenico Campi; C. Cacciatore; Claudio Coriasso; Cesare F. Rigo; Heinz-Christoph Neitzert
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Paper Abstract

We report both linear and nonlinear grating coupling to a planar multiple quantum well (MQW) waveguide grown by chemical beam epitaxy. We demonstrate a strong dependence of the coupling angle on the incident power in the wavelength range (lambda) equals 1.57 - 1.60 micrometers . The obtained nonlinear variation of neff were found to be negative, and on the order of 10-3, in agreement with many-body calculations performed by the authors. We show that thermal effects can be ruled out. At coupled light intensity as low as 40 mW, nonlinear switching condition was achieved; the power density to obtain the switching process is substantially lower than in previous works. As part of this work, we report the systematic investigation of the linear and nonlinear absorption properties of several InGaAs/InP MQW structures, measuring a series of transmission spectra in the region of the band edge for various pump intensities and observing large changes in the absorption coefficient. Through comparison with these results, we speculate that the mechanism responsible for the refractive nonlinearity observed in the waveguide is consistent with purely excitonic effects.

Paper Details

Date Published: 19 November 1993
PDF: 11 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162755
Show Author Affiliations
Domenico Campi, CSELT (Italy)
C. Cacciatore, CSELT (Italy)
Claudio Coriasso, CSELT (Italy)
Cesare F. Rigo, CSELT (Italy)
Heinz-Christoph Neitzert, CSELT (Italy)


Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II
Fabio Beltram; Erich Gornik, Editor(s)

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