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Proceedings Paper

Very large |x(2)(2w)| in the near infrared in AlSb/GaSb-InAsSb/AlSb asymmetric quantum wells
Author(s): Sandro Scandolo; Alfonso Baldereschi; Federico Capasso
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Paper Abstract

A very large second-order susceptibility (Chi) (2)(2(omega) ), responsible for frequency doubling, is obtained for interband transitions at near-infrared wavelengths in a step-like asymmetric quantum well based on GaSb-InAsSb compounds. The structure is engineered so as to achieve a double energy resonance between the electron and hole states and to maximize all relevant dipole matrix elements. The optimized structure has (Chi) (2)(2(omega) ) approximately equals 9 X 10-9 m/V at a pump wavelength of 1.5 micrometers , with an enhancement of about 30 times with respect to the second-order susceptibility of bulk GaAs.

Paper Details

Date Published: 19 November 1993
PDF: 9 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162752
Show Author Affiliations
Sandro Scandolo, IRRMA (Switzerland) and Scuola Internazionale Superiore di Studi Avanzati (Italy)
Alfonso Baldereschi, IRRMA (Switzerland) and Univ. di Trieste (Italy)
Federico Capasso, AT&T Bell Labs. (United States)


Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II

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