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Proceedings Paper

Si-SiGe and GaAl-AlAs quantum-well structures for second-harmonic generation
Author(s): K. B. Wong; Mike J. Shaw; B. M. Adderley; Elizabeth A. Corbin; Milan Jaros
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Paper Abstract

We report full scale calculations with relativistic pseudopotentials of first and second order optical susceptibilities in p-type GaAs-AlAs and Si-SiGe quantum well structures in which the response arises due to excitations between valence minibands. Our results contain several novel features. In particular, the peak value of the frequency dependent susceptibility is controlled by optical transitions originating from regions of the momentum space lying further from the center of the Brillouin zone. The excitation steps that give a quantitative meaning to the optical nonlinearity involve quantum states lying above the semiclassical barrier.

Paper Details

Date Published: 19 November 1993
PDF: 8 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162750
Show Author Affiliations
K. B. Wong, Univ. of Newcastle upon Tyne (United Kingdom)
Mike J. Shaw, Univ. of Newcastle upon Tyne (United Kingdom)
B. M. Adderley, Univ. of Newcastle upon Tyne (United Kingdom)
Elizabeth A. Corbin, Univ. of Newcastle upon Tyne (United Kingdom)
Milan Jaros, Univ. of Newcastle upon Tyne (United Kingdom)


Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II

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