Share Email Print

Proceedings Paper

In-situ structured MBE-grown crystals for applications in optoelectronics
Author(s): Karlheinz H. Gulden; Michael Kneissl; Peter Kiesel; A. Hoefler; S. Malzer; Gottfried H. Doehler; X. X. Wu; John Stephen Smith
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We present the shadow mask molecular beam epitaxial (MBE) growth technique which allows an in situ lateral structuring of the doping profile and the growth rate on a micrometers scale. The electrical dc characteristics show that excellent quality selective contacts have been achieved on devices with lateral dimensions down to the micrometers range. The leakage currents are, even for highly doped structures, in the nA range. High reflectivity Bragg mirrors and pronounced exciton peaks observed on MQW structures confirm the high quality of the regrown material. The influence of the aspect ratio on the growth rates is very small. We have applied this novel technique to fabricate various selectively contacted optoelectronic devices based on n-i-p-i doping superlattices. For GaAs Franz Keldysh n-i-p-i modulators with selective contacts an on/off ratio of 6:1 has been achieved. High frequency results obtained on medium size devices indicate that 3 dB frequencies in the GHz range should be possible for n-i-p-i devices with dimensions < 4 micrometers fabricated with this technique. By selectively contacting the QWs in a modulation doped hetero n-i-p-i structure constructive superposition of field and carrier induced absorption changes have been achieved.

Paper Details

Date Published: 19 November 1993
PDF: 11 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162748
Show Author Affiliations
Karlheinz H. Gulden, Univ. Erlangen-Nuernberg (Germany)
Michael Kneissl, Univ. Erlangen-Nuernberg (Germany)
Peter Kiesel, Univ. Erlangen-Nuernberg (Germany)
A. Hoefler, Univ. Erlangen-Nuernberg (Germany)
S. Malzer, Univ. Erlangen-Nuernberg (Germany)
Gottfried H. Doehler, Univ. Erlangen-Nuernberg (Germany)
X. X. Wu, Univ. of California/Berkeley (United States)
John Stephen Smith, Univ. of California/Berkeley (United States)

Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II
Fabio Beltram; Erich Gornik, Editor(s)

© SPIE. Terms of Use
Back to Top