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Proceedings Paper

Modification of heterojunction band offsets at III-V/IV/III-V interfaces
Author(s): G. Biasiol; L. Sorba; Gvido Bratina; R. Nicolini; Alfonso Franciosi
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Paper Abstract

We summarize here a systematic investigation of the structural and electronic properties of III- V/IV semiconductor heterojunctions (with IV equals Si, Ge, and III-V equals GaAs, AlAs) as well as III-V/IV/III-V single and multiple quantum well structures. All structures were fabricated by molecular beam epitaxy and characterized in-situ by reflection high energy electron diffraction and x-ray photoemission spectroscopy, and ex-situ by x-ray diffraction and transmission electron microscopy. We found that relatively abrupt composition profiles and ideal pseudomorphic growth could be achieved through appropriate deposition conditions. Measurements of the band discontinuities indicated that large deviations from the commutativity and transitivity rules of heterojunction band offsets are observed in most of these interfaces. Such deviations demonstrate the dependence of the band discontinuities on the local interface environment and are related, in general, to the establishment of inequivalent local interface environments.

Paper Details

Date Published: 19 November 1993
PDF: 13 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162747
Show Author Affiliations
G. Biasiol, Consorzio Interuniversitario di Fisica della Materia (Italy) and Univ. of Minnesota (United States)
L. Sorba, Consorzio Interuniversitario di Fisica della Materia (Italy) and Univ. of Minnesota (United States)
Gvido Bratina, Consorzio Interuniversitario di Fisica della Materia (Italy) and Univ. of Minnesota (United States)
R. Nicolini, Consorzio Interuniversitario di Fisica della Materia (Italy) and Univ. of Minnesota (United States)
Alfonso Franciosi, Consorzio Interuniversitario di Fisica della Materia (Italy) and Univ. of Minnesota (United States)


Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II
Fabio Beltram; Erich Gornik, Editor(s)

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