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Proceedings Paper

Investigation of strain relaxation in short-period SimGen superlattices using reciprocal space mapping
Author(s): E. Koppensteiner; P. Hamberger; Guenther E. Bauer; Horst Kibbel; Hartmut Presting; Erich Kasper; Andreas Pesek
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Paper Abstract

The optoelectronic properties of ultrathin SimGen strained layer superlattices (SLSs) depend strongly on their structural perfection and the strain adjustment of the SLS by a Si1-xGex alloy buffer. We used double crystal and triple axis x-ray diffractometry to characterize the structural properties of short period Si6Ge4 and Si9Ge6 SLSs grown on about 1 micrometers thick step-graded SiGe alloy buffers. As grown SLSs and samples annealed subsequently at 550 degree(s)C, 650 degree(s)C, and 780 degree(s)C for 60 min were investigated, the latter to study effects of post-growth thermal treatments typical for conventional Si device fabrication. Precise strain data were extracted from two-dimensional reciprocal space maps around (004) and (224) reciprocal lattice points. These data were used as refined input parameters for the dynamical simulation of the integrated intensity along the q[004] direction.

Paper Details

Date Published: 19 November 1993
PDF: 10 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162744
Show Author Affiliations
E. Koppensteiner, Johannes Kepler Univ. (Austria)
P. Hamberger, Johannes Kepler Univ. (Austria)
Guenther E. Bauer, Johannes Kepler Univ. (Austria)
Horst Kibbel, Daimler Benz AG (Germany)
Hartmut Presting, Daimler Benz AG (Germany)
Erich Kasper, Daimler Benz AG (Germany)
Andreas Pesek, Johannes Kepler Univ. (Austria)


Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II
Fabio Beltram; Erich Gornik, Editor(s)

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