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Proceedings Paper

Heterojunction band discontinuities measured by free-electron laser internal photoemission
Author(s): Carlo Coluzza; J. Almeida; E. Tuncel; Jean Louis Staehli; P. A. Baudat; Giorgio Margaritondo; Jim T. McKinley; Akira Ueda; Alan V. Barnes; Royal G. Albridge; Norman H. Tolk; D. Martin; Francois Morier-Genoud; C. Dupuy; Alok P. Rudra; Marc Ilegems
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Paper Abstract

We used optical pumping by the Vanderbilt Free Electron Laser and the technique of internal photoemission to measure with high accuracy the conduction band discontinuity of semiconductor heterojunction interfaces. The experiment is the first application of a free- electron laser to interface research.

Paper Details

Date Published: 19 November 1993
PDF: 17 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162743
Show Author Affiliations
Carlo Coluzza, Ecole Polytechnique Federale (Switzerland)
J. Almeida, Ecole Polytechnique Federale (Switzerland)
E. Tuncel, Ecole Polytechnique Federale (Switzerland)
Jean Louis Staehli, Ecole Polytechnique Federale (Switzerland)
P. A. Baudat, Ecole Polytechnique Federale (Switzerland)
Giorgio Margaritondo, Ecole Polytechnique Federale (Switzerland)
Jim T. McKinley, Vanderbilt Univ. (United States)
Akira Ueda, Vanderbilt Univ. (United States)
Alan V. Barnes, Vanderbilt Univ. (United States)
Royal G. Albridge, Vanderbilt Univ. (United States)
Norman H. Tolk, Vanderbilt Univ. (United States)
D. Martin, Ecole Polytechnique Federale (Switzerland)
Francois Morier-Genoud, Ecole Polytechnique Federale (Switzerland)
C. Dupuy, Ecole Polytechnique Federale (Switzerland)
Alok P. Rudra, Ecole Polytechnique Federale (Switzerland)
Marc Ilegems, Ecole Polytechnique Federale (Switzerland)

Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II
Fabio Beltram; Erich Gornik, Editor(s)

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