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Proceedings Paper

Effect of high-temperature treatment in different ambient on the properties of SnO2:F
Author(s): Georgi D. Beshkov; Kroum M. Kolentsov; D. B. Dimitrov; Lilyana S. Yourukova; A. S. Rachkova; M. T. Kamenova
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Paper Abstract

The influence of an additional high-temperature treatment of SnO2 : F thin films prepared on silicon substrates is studied. The films are deposited by a spray pyrolytic technique at various substrate temperatures and deposition times. As-deposited SnO2 : F thin films are further annealed at temperature of 1000 degree(s)C in oxygen environment for times of 15 to 90 min as well as by rapid thermal annealing in vacuum of 6, 7 X 10-3 Pa for 1 min at the same annealing temperature. The changes of the film characteristics after the treatment are studied. Some peculiarities of the morphology film surface both on the deposition conditions and the various thermal treatment are investigated. Possible mechanisms explaining the obtained experimental results are discussed.

Paper Details

Date Published: 22 October 1993
PDF: 7 pages
Proc. SPIE 2017, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XII, (22 October 1993); doi: 10.1117/12.161984
Show Author Affiliations
Georgi D. Beshkov, Institute of Solid State Physics (Bulgaria)
Kroum M. Kolentsov, Institute of Solid State Physics (Bulgaria)
D. B. Dimitrov, Institute of Solid State Physics (Bulgaria)
Lilyana S. Yourukova, Institute of Solid State Physics (Bulgaria)
A. S. Rachkova, Institute of Solid State Physics (Bulgaria)
M. T. Kamenova, Institute of Microelectronics (Bulgaria)


Published in SPIE Proceedings Vol. 2017:
Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XII
Carl M. Lampert, Editor(s)

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