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Proceedings Paper

Recent advances with mercuric iodide x-ray detectors and large-area silicon avalanche photodiodes
Author(s): Andrzej J. Dabrowski; Jan S. Iwanczyk; Yuzhong J. Wang; Michael C. Madden; Marek Szawlowski
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Paper Abstract

The paper presents advances in two sensor technologies: (1) Mercuric Iodide (HgI2) X-ray Detector Technology and, (2) Large Area Silicon Avalanche Photodiode (APD) Technology, which after years of development have recently produced commercially viable devices. Large Area Silicon Avalanche Photodiodes, which are solid-state light sensitive devices with internal amplification, combine the convenience, ruggedness and low power consumption of traditional semiconductor p-n and p-i-n photodiodes with the high light sensitivity and large photosensitive area approaching the active areas of traditional vacuum photomultiplier tubes. Device approaching 1-inch diameter with internal gain of up to 1000, have been developed by utilizing a beveled edge structure. By combining APD's with scintillation crystals, resolution of 6% (FWHM) was obtained for 662 keV energy line of 137Cs using a CsI(Tl) scintillator, and 7% (FWHM) was obtained using a NaI(Tl) scintillator. Resolution of 14% (FWHM) at room temperature and 11% (FWHM) at 0 degree(s)C have been obtained for APD's coupled to BGO scintillators. Rise times of 3 ns were measured by applying an impulse signal input, to a 200 mm2 device.

Paper Details

Date Published: 22 October 1993
PDF: 11 pages
Proc. SPIE 2007, Scintillating Fiber Technology and Applications, (22 October 1993); doi: 10.1117/12.161927
Show Author Affiliations
Andrzej J. Dabrowski, Xsirius, Inc. (United States)
Jan S. Iwanczyk, Xsirius, Inc. (United States)
Yuzhong J. Wang, Xsirius, Inc. (United States)
Michael C. Madden, Advanced Photonix, Inc. (United States)
Marek Szawlowski, Advanced Photonix, Inc. (United States)


Published in SPIE Proceedings Vol. 2007:
Scintillating Fiber Technology and Applications
Ervin J. Fenyves, Editor(s)

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