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Proceedings Paper

512 x 512 frame transfer and storage imaging device with tin oxide gates and open-pinned phase technology
Author(s): Robert Thomas Tacka; Leroy C. Colquitt; Bron R. Frias; Eric S. Juergensen; Arlene A. Santos; Eugene V. Thompson; Alfred P. Turley
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Paper Abstract

A versatile high performance Frame Transfer and Storage imaging device has been demonstrated using tin oxide gates and Open Pinned Phase (OPP) technology. The device consists of a 512 X 512 imaging array and integral 512 X 512 frame buffer. The detector size is 18 micrometers X 18 micrometers , however, pixel size is electronically controllable by detector aggregation in the X and Y directions. The use of tin oxide gates and OPP technology provide a front side illuminated device with high Quantum Efficiency and low leakage. This combination of features yields a mechanically robust high resolution imager, ideally suited for military, scientific, and commercial applications requiring high sensitivity and/or long stare times.

Paper Details

Date Published: 15 November 1993
PDF: 9 pages
Proc. SPIE 1952, Surveillance Technologies and Imaging Components, (15 November 1993); doi: 10.1117/12.161420
Show Author Affiliations
Robert Thomas Tacka, Westinghouse Electric Corp. (United States)
Leroy C. Colquitt, Westinghouse Electric Corp. (United States)
Bron R. Frias, Westinghouse Electric Corp. (United States)
Eric S. Juergensen, Westinghouse Electric Corp. (United States)
Arlene A. Santos, Westinghouse Electric Corp. (United States)
Eugene V. Thompson, Westinghouse Electric Corp. (United States)
Alfred P. Turley, Westinghouse Electric Corp. (United States)

Published in SPIE Proceedings Vol. 1952:
Surveillance Technologies and Imaging Components
Sankaran Gowrinathan; C. Bruce Johnson; James F. Shanley, Editor(s)

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