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Proceedings Paper

Development of MBE-grown HgCdTe 64 x 64 FPA for long-wavelength IR detection
Author(s): Toshio Kanno; Minoru Saga; Akihiro Kawahara; Ryuichi Oikawa; Akira Ajisawa; Yoshitada Tomioka; Naoki Oda; Toshio Yamagata; Susumu Murashima; Tsuyosi Shima; Noboru Yasuda
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Paper Abstract

The HgCdTe (MCT) 64 X 64 focal plane array (FPA) for long wavelength infrared (LWIR) detection was developed, using MCT epilayers grown by molecular beam epitaxy (MBE). The n-on-p photodiode array has a cutoff wavelength of 10.7 micrometers . The readout circuit, with off focal plane integration capacitance, was designed for 77 K operation. These components were fabricated independently and were hybridized. The 97.8% operability was obtained. Photodiode characteristics for each pixel were measured directly. Mean R$o)A value of 1.9 (Omega) (DOT) cm2 and quantum efficiency of 0.3 were obtained. Using an infrared camera system with nonuniformity correction function, the infrared image was successfully demonstrated. An NETD (noise equivalent temperature difference) value of 0.117 K was attained with an F/2.5 optical lens under the 300 K background condition.

Paper Details

Date Published: 1 November 1993
PDF: 8 pages
Proc. SPIE 2020, Infrared Technology XIX, (1 November 1993); doi: 10.1117/12.160578
Show Author Affiliations
Toshio Kanno, Japan Defense Agency (Japan)
Minoru Saga, Japan Defense Agency (Japan)
Akihiro Kawahara, NEC Corp. (Japan)
Ryuichi Oikawa, NEC Corp. (Japan)
Akira Ajisawa, NEC Corp. (Japan)
Yoshitada Tomioka, NEC Corp. (Japan)
Naoki Oda, NEC Corp. (Japan)
Toshio Yamagata, NEC Corp. (Japan)
Susumu Murashima, NEC Corp. (Japan)
Tsuyosi Shima, NEC Corp. (Japan)
Noboru Yasuda, NEC Corp. (Japan)

Published in SPIE Proceedings Vol. 2020:
Infrared Technology XIX
Bjorn F. Andresen; Freeman D. Shepherd, Editor(s)

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