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Proceedings Paper

Transient photoresponse of an a-Si:H p-i-n photodetector: modeling and analysis
Author(s): Yi Fang; Richard Y. Kwor; Dashen Shen
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Paper Abstract

The transient photoresponse of a hydrogenated amorphous silicon (a-Si:H) p-i-n photodetector has been studied from the circuit analysis point of view. Three possible transient working modes--dc bias mode, continuous light wave mode, and charge-storage mode, were analyzed and the speed, resolution, and accuracy of an 'analog' sensor or sensor array were examined. It is concluded that dc bias mode is the best among the three.

Paper Details

Date Published: 15 October 1993
PDF: 9 pages
Proc. SPIE 2022, Photodetectors and Power Meters, (15 October 1993); doi: 10.1117/12.158590
Show Author Affiliations
Yi Fang, Univ. of Colorado/Colorado Springs (United States)
Richard Y. Kwor, Univ. of Colorado/Colorado Springs (United States)
Dashen Shen, Univ. of Alabama in Huntsville (United States)

Published in SPIE Proceedings Vol. 2022:
Photodetectors and Power Meters
Kenneth J. Kaufmann, Editor(s)

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