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Proceedings Paper

Picosecond silicon metal-semiconductor-metal photodiode
Author(s): Thomas Y. Hsiang; Sotiris Alexandrou; Chia-Chi Wang; Mark Y. Liu; Stephen Y. Chou
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Paper Abstract

The ultrafast characteristics of crystalline-silicon metal-semiconductor-metal (MSM) photodiodes with finger widths and spacings down to 200 nm, subjected to femtosecond optical pulse excitations, was measured with a subpicosecond electro-optic sampling system. Electrical responses with fullwidth at half-maximum (FWHM) as short as 3.7 ps, at a corresponding 3 dB bandwidth of 110 GHz, were generated by violet-light excitation. These diodes are the fastest silicon photodetectors reported to date. Detailed bias and light-intensity dependence of the diode response has been measured. These results are used to obtain the velocity-field relation of electrons in silicon and to demonstrate the ideal transit-time-limited response of the diodes.

Paper Details

Date Published: 15 October 1993
PDF: 7 pages
Proc. SPIE 2022, Photodetectors and Power Meters, (15 October 1993); doi: 10.1117/12.158589
Show Author Affiliations
Thomas Y. Hsiang, Univ. of Rochester (United States)
Sotiris Alexandrou, Univ. of Rochester (United States)
Chia-Chi Wang, Univ. of Rochester (United States)
Mark Y. Liu, Univ. of Minnesota/Twin Cities (United States)
Stephen Y. Chou, Univ. of Minnesota/Twin Cities (United States)

Published in SPIE Proceedings Vol. 2022:
Photodetectors and Power Meters
Kenneth J. Kaufmann, Editor(s)

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