Share Email Print
cover

Proceedings Paper

Signal conditioning circuit between a-Si:H p-i-n photodetector and A/D converter
Author(s): Yi Fang; Richard Y. Kwor
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

A CMOS charge-to-voltage converting circuit is designed. This circuit works with a hydrogenated amorphous silicon (a-SiH) p-i-n photodetector in either dc bias mode or charge- storage mode, converts the photo-charge of the detector into a voltage with a high linearity at 10 MHz, and eliminates the effect of the dark current. The modeling of the a-Si:H p-i-n photodetector in the two working modes is implemented using SPICE switches.

Paper Details

Date Published: 15 October 1993
PDF: 6 pages
Proc. SPIE 2022, Photodetectors and Power Meters, (15 October 1993); doi: 10.1117/12.158582
Show Author Affiliations
Yi Fang, Univ. of Colorado/Colorado Springs (United States)
Richard Y. Kwor, Univ. of Colorado/Colorado Springs (United States)


Published in SPIE Proceedings Vol. 2022:
Photodetectors and Power Meters
Kenneth J. Kaufmann, Editor(s)

© SPIE. Terms of Use
Back to Top