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Proceedings Paper

Inversion-channel resonant-cavity-enhanced field-effect photodetector for 2D OEIC applications
Author(s): Sonu L. Daryanani; Geoffrey W. Taylor; Timothy A. Vang; Stephen K. Sargood; Benjamin Tell; D. Wendling; Lloyd R. Harriott
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Paper Abstract

The operation of the inversion-channel Resonant-Cavity Enhanced (RCE) photodetector is demonstrated in a configuration compatible with the Vertical Cavity Surface Emitting Laser (VCSEL). The phototransistor used 3 strained InGaAs/GaAs quantum well's as the absorbing region and a post-growth dielectric top stack. A quantum efficiency of 41% was obtained at a resonant wavelength of 0.94 micrometers , thereby giving a resonant enhancement factor of 13.5. A bipolar transistor gain of 6.8 at a current density of 10 A/cm2 allowed the phototransistor responsivity to reach 2.1 A/W at the resonant wavelength. We also demonstrate the movement of the resonant peak through the use of Focussed Ion-Beam (FIB) etching which has potential applications in Wavelength Division Multiplexed (WDM) systems.

Paper Details

Date Published: 15 October 1993
PDF: 14 pages
Proc. SPIE 2022, Photodetectors and Power Meters, (15 October 1993); doi: 10.1117/12.158581
Show Author Affiliations
Sonu L. Daryanani, AT&T Bell Labs. (United States)
Geoffrey W. Taylor, AT&T Bell Labs. (United States)
Timothy A. Vang, AT&T Bell Labs. (United States)
Stephen K. Sargood, AT&T Bell Labs. (United States)
Benjamin Tell, AT&T Bell Labs. (United States)
D. Wendling, AT&T Solid State Technology (United States)
Lloyd R. Harriott, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 2022:
Photodetectors and Power Meters
Kenneth J. Kaufmann, Editor(s)

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