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Proceedings Paper

dc and ac small signal electronic transport in ZnTe-ZnSe structures grown by molecular beam epitaxy
Author(s): Waclaw Bala
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Paper Abstract

Results of dc and ac small signal electronic transport study of ZnTe/ZnSe heterostructures grown by molecular beam epitaxy are presented. The small signal admittance characteristics of these heterostructures show certain distinct features which are located at a bias point dependent on the interfaces. From the bias location of these features, the interfaces barrier height in ZnTe/ZnSe heterostructures is found to be 0.6 +/- 0.1 eV for electrons injected into ZnSe.

Paper Details

Date Published: 15 October 1993
PDF: 5 pages
Proc. SPIE 1845, Liquid and Solid State Crystals: Physics, Technology and Applications, (15 October 1993); doi: 10.1117/12.156982
Show Author Affiliations
Waclaw Bala, N. Copernicus Univ. (Poland)


Published in SPIE Proceedings Vol. 1845:
Liquid and Solid State Crystals: Physics, Technology and Applications

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