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Proceedings Paper

Determination of the density of deep traps in semiconductors by using the simultaneous TL/TSC measurement
Author(s): Arkadiusz Mandowski; Jozef Swiatek-Prokop
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Paper Abstract

We demonstrate, that performing series of simultaneous TL/TSC (thermoluminescence/thermally stimulated conductivity) experiments it is possible to estimate the relative density of deep (thermally disconnected) traps in semiconducting crystals and other high-resistivity materials. The method is based on new, recently derived analytical formula for TSC. It is assumed that the crystal under study has an arbitrary number of discrete trap levels and one kind of recombination centers. The method is verified by means of numerical calculations.

Paper Details

Date Published: 15 October 1993
PDF: 4 pages
Proc. SPIE 1845, Liquid and Solid State Crystals: Physics, Technology and Applications, (15 October 1993); doi: 10.1117/12.156930
Show Author Affiliations
Arkadiusz Mandowski, Pedagogical Univ. of Czestochowa (Poland)
Jozef Swiatek-Prokop, Pedagogical Univ. of Czestochowa (Poland)


Published in SPIE Proceedings Vol. 1845:
Liquid and Solid State Crystals: Physics, Technology and Applications

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