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Proceedings Paper

Evaluation of strain relaxation in GaAsP/GaAs multilayer structure grown on misoriented GaAs substrate
Author(s): Jerzy Sass
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Paper Abstract

The relaxed multilayer structure is characterized by means of a tilt angle, C-factor, and the lateral coherency length. All these parameters were evaluated for the GaAs(0.7)P(0.3)/GaAs multilayer structure grown on a miscut GaAs(001) substrate. The determination of SL structural parameters was performed using the simulation program developed for two dimensional calculations important for multilayer structure grown on miscut substrates.

Paper Details

Date Published: 15 October 1993
PDF: 4 pages
Proc. SPIE 1845, Liquid and Solid State Crystals: Physics, Technology and Applications, (15 October 1993); doi: 10.1117/12.156924
Show Author Affiliations
Jerzy Sass, Institute of Electronic Materials Technology (Poland)


Published in SPIE Proceedings Vol. 1845:
Liquid and Solid State Crystals: Physics, Technology and Applications

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