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Proceedings Paper

Electric properties of n-AgInS2 crystals
Author(s): B. Koscielniak-Mucha; A. Opanowicz; Vasselin K. Vassilev
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Paper Abstract

The temperature dependences of the electron concentration and electron mobility in the AgInS2 chalcopyrite crystals have been determined, in the temperature range 180 divided by 400 K, from the Hall effect study by using the van der Pauv method. The ionization energies and the densities of donors have been determined.

Paper Details

Date Published: 15 October 1993
PDF: 3 pages
Proc. SPIE 1845, Liquid and Solid State Crystals: Physics, Technology and Applications, (15 October 1993); doi: 10.1117/12.156921
Show Author Affiliations
B. Koscielniak-Mucha, Technical Univ. of Lodz (Poland)
A. Opanowicz, Technical Univ. of Lodz (Poland)
Vasselin K. Vassilev, Higher Institute of Chemical Technology and Metallurgy (Bulgaria)


Published in SPIE Proceedings Vol. 1845:
Liquid and Solid State Crystals: Physics, Technology and Applications

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