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Proceedings Paper

Arsenic diffused p+-n HgCdTe photodiodes
Author(s): Jolanta Rutkowska; Antoni Rogalski; Jozef Piotrowski; Jaroslaw Pawluczyk
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Paper Abstract

The p+-n homojunctions were formed by arsenic diffusion in the HgCdTe monocrystals and epilayers. Photodiode performance was established by measuring the current-voltage and spectral response characteristics. LWIR photodiodes are background limited at 77 K. MWIR photodiodes effectively operate at elevated temperature around 200 K and exhibit near BLIP performance when optical immersion is used.

Paper Details

Date Published: 15 October 1993
PDF: 5 pages
Proc. SPIE 1845, Liquid and Solid State Crystals: Physics, Technology and Applications, (15 October 1993); doi: 10.1117/12.156918
Show Author Affiliations
Jolanta Rutkowska, Military Technical Academy (Poland)
Antoni Rogalski, Military Technical Academy (Poland)
Jozef Piotrowski, VIGO S.A. (Poland)
Jaroslaw Pawluczyk, VIGO S.A. (Poland)

Published in SPIE Proceedings Vol. 1845:
Liquid and Solid State Crystals: Physics, Technology and Applications

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