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Proceedings Paper

X-ray investigation of defects in SrLaAlO4 single crystals
Author(s): Krystyna Mazur; Jerzy Sass; Anna Pajaczkowska
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Paper Abstract

The SrLaAlO4 single crystals are used as a substrate for high temperature superconductor epitaxial layers with uniform physical properties. Good quality of epitaxial layers requires both crystallographic perfection and appropriate physical properties of substrate material. In this paper we investigated the crystallographic perfection of SrLaAlO4 crystals by means of x-ray diffraction topography. The samples were cut-out perpendicular to [100] direction. In some of the samples the present investigations revealed thin lamellar volume defects. It was stated at different interplanar spacing in the defect region.

Paper Details

Date Published: 15 October 1993
PDF: 7 pages
Proc. SPIE 1845, Liquid and Solid State Crystals: Physics, Technology and Applications, (15 October 1993); doi: 10.1117/12.156907
Show Author Affiliations
Krystyna Mazur, Institute of Electronic Materials Technology (Poland)
Jerzy Sass, Institute of Electronic Materials Technology (Poland)
Anna Pajaczkowska, Institute of Electronic Materials Technology (Poland)


Published in SPIE Proceedings Vol. 1845:
Liquid and Solid State Crystals: Physics, Technology and Applications

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