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Proceedings Paper

Process integration issues in chemical-vapor-deposited copper-based metallization
Author(s): Ajay Jain; Toivo T. Kodas; Rahul Jairath; Mark J. Hampden-Smith
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Paper Abstract

We have studied the microstructure, surface roughness, conformality and adhesion properties of chemical vapor deposited copper films using (hfac)Cu(VTMS) in an effort to identify and address some of these issues. The microstructure and surface roughness of the deposited films were evaluated using scanning electron microscopy and atomic force microscopy. The film microstructure changed from columnar oriented faceted grains to finer and more equiaxed grains while the film roughness increased as precursor partial pressure was increased in the reactor chamber. Conformal films were deposited into trenches with sub-half micron openings and aspect ratios greater than 1. The adhesion of CVD copper films on titanium nitride (TiN) and tungsten (W) was also evaluated. The results from this study demonstrate the applicability of CVD copper for ULSI.

Paper Details

Date Published: 15 September 1993
PDF: 7 pages
Proc. SPIE 2090, Multilevel Interconnection: Issues That Impact Competitiveness, (15 September 1993); doi: 10.1117/12.156533
Show Author Affiliations
Ajay Jain, Univ. of New Mexico (United States)
Toivo T. Kodas, Univ. of New Mexico (United States)
Rahul Jairath, National Semiconductor Corp. (United States)
Mark J. Hampden-Smith, Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 2090:
Multilevel Interconnection: Issues That Impact Competitiveness
Hoang Huy Hoang; Ron Schutz; Joseph B. Bernstein; Barbara Vasquez, Editor(s)

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