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Proceedings Paper

Simulations of metallization uniformity from large planar sputtering targets
Author(s): Fred Bouchard; W. A. Manring
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Paper Abstract

Advanced sputtering equipment performance is affected by numerous system parameters. In this work, the effect of target crystallographic orientation, grain size, atomic channeling, and gas scattering have been incorporated into Monte Carlo computer simulations of advanced planar sputtering systems. A grid of polygons was created over the target area by the computer program. Each polygon of the grid represented an individual grain with a discrete crystal orientation. Crystallographic orientation distribution function (ODF) files were obtained for a number of polycrystalline targets through pole figure x ray analysis and harmonic texture analysis. The ODF files were used to assign discrete crystal orientations to each polygon. The program simulated the sputtering process by choosing a location on the target, based on the depth profile of a sputtered target and finally calculating the sputtered atom emission angles from the crystal orientation of that grain.

Paper Details

Date Published: 15 September 1993
PDF: 9 pages
Proc. SPIE 2090, Multilevel Interconnection: Issues That Impact Competitiveness, (15 September 1993); doi: 10.1117/12.156528
Show Author Affiliations
Fred Bouchard, Tosoh SMD (United States)
W. A. Manring, Tosoh SMD (United States)

Published in SPIE Proceedings Vol. 2090:
Multilevel Interconnection: Issues That Impact Competitiveness
Hoang Huy Hoang; Ron Schutz; Joseph B. Bernstein; Barbara Vasquez, Editor(s)

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