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Proceedings Paper

Simplified air bridge technique using photoresist UV stabilization process
Author(s): James Tajadod; Linda J. Insalaco
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Paper Abstract

Due to their favorable structural and electrical properties, air bridges are used extensively by silicon and GaAs monolithic microwave integrated circuit (MMIC) designers. Fabrication of such structures using the conventional techniques is complex. In this paper novel construction of air bridge structures of up to 7.5 micrometers high using an ultra violet (UV) stabilized bi-layer photoresist process, evaporated metal scheme, and lift-off patterning procedure, is realized. Deep UV stabilization of positive photo resist is discussed. Removal of the hardened resist via organic photo resist stripper is addressed.

Paper Details

Date Published: 15 September 1993
PDF: 7 pages
Proc. SPIE 2090, Multilevel Interconnection: Issues That Impact Competitiveness, (15 September 1993); doi: 10.1117/12.156524
Show Author Affiliations
James Tajadod, Burlington Semiconductor Operations (United States)
Linda J. Insalaco, Fusion Semiconductor Systems (United States)

Published in SPIE Proceedings Vol. 2090:
Multilevel Interconnection: Issues That Impact Competitiveness
Hoang Huy Hoang; Ron Schutz; Joseph B. Bernstein; Barbara Vasquez, Editor(s)

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