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Proceedings Paper

Extending resist-etch-back planarization to 0.5-um logic and ASIC circuits
Author(s): Ted Regan White; W. J. Ciosek; E. J. Prinz; Charles Fredrick King; R. Blumenthal; Charles W. Stager; B. M. Somero; M. P. Woo; U. Sharma; R. W. Fiordalice; Jeff L. Klein
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Paper Abstract

This work demonstrates the extendability of a resist etch back (REB) planarization technique for use with 0.5 micrometers logic technologies. This new technique compensates for loading effects during etch back. It provides sufficient local and regional planarity for fine line patterning with i-line resists. The new REB planarization is characterized in terms of oxide thicknesses over packed and isolated lines and step heights over packed and isolated spaces. Results of the new process are compared to those of chemical-mechanical polishing in terms of metal serpentine resistances and shorts between interdigitated metal combs. The new process was integrated with collimated sputtered titanium and CVD tungsten providing high aspect ratio contacts and vias with low resistances. Sufficient photolithographic margins were obtained with REB. Together these processes meet the requirements for 0.5 micrometers logic integrated circuits with stacked vias and contacts with up to four levels of metal.

Paper Details

Date Published: 15 September 1993
PDF: 10 pages
Proc. SPIE 2090, Multilevel Interconnection: Issues That Impact Competitiveness, (15 September 1993); doi: 10.1117/12.156513
Show Author Affiliations
Ted Regan White, Motorola (United States)
W. J. Ciosek, Motorola (United States)
E. J. Prinz, Motorola (United States)
Charles Fredrick King, Motorola (United States)
R. Blumenthal, Motorola (United States)
Charles W. Stager, Motorola (United States)
B. M. Somero, Motorola (United States)
M. P. Woo, Motorola (United States)
U. Sharma, Motorola (United States)
R. W. Fiordalice, Motorola (United States)
Jeff L. Klein, Motorola (United States)

Published in SPIE Proceedings Vol. 2090:
Multilevel Interconnection: Issues That Impact Competitiveness
Hoang Huy Hoang; Ron Schutz; Joseph B. Bernstein; Barbara Vasquez, Editor(s)

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