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Proceedings Paper

Triple-level metal process for high-performance and high-density 0.6-um/5-V application-specific integrated circuits
Author(s): Sharad Prasad; M. Bruner; Fusen E. Chen; Mitan Gandhi; Y. C. Lu; Chiyi Y. Kao; Steve Yang; William Hata
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Paper Abstract

In this paper a triple level metal interconnect process for a commercially available high density, high performance 0.6 micrometers /5V CMOS technology is described. Poly gates of 0.6 micrometers (Leff equals 0.45 micrometers ) were fabricated and then planarized by BPSG reflow and resist etch back. Blanket W and etch back were used to fill high aspect ratio contacts and vias with TiN as the nucleation barrier. Low temperature RTA was performed after Ti/TiN deposition, and rf etch was performed for contacts and vias respectively, prior to Ti/TiN depositing, to achieve reliable contacts and via resistance. Stable contacts/via resistance down to 0.7 micrometers with good junction integrity/stackability and negative metal enclosure have been demonstrated and been physically characterized by HTEM. TiN/Al-Cu/TiN was used for M1/M2/M3 interconnection and TEOS/resist etch back/TEOS refill was used for ILD1 and ILD2. A TEOS/nitride sandwich was used for final passivation. A satisfactory yield has been achieved on 2.9 cm2 die size with 0.6 million usable gates.

Paper Details

Date Published: 15 September 1993
PDF: 10 pages
Proc. SPIE 2090, Multilevel Interconnection: Issues That Impact Competitiveness, (15 September 1993); doi: 10.1117/12.156512
Show Author Affiliations
Sharad Prasad, LSI Logic Corp. (United States)
M. Bruner, LSI Logic Corp. (United States)
Fusen E. Chen, LSI Logic Corp. (United States)
Mitan Gandhi, LSI Logic Corp. (United States)
Y. C. Lu, LSI Logic Corp. (United States)
Chiyi Y. Kao, LSI Logic Corp. (United States)
Steve Yang, LSI Logic Corp. (United States)
William Hata, LSI Logic Corp. (United States)

Published in SPIE Proceedings Vol. 2090:
Multilevel Interconnection: Issues That Impact Competitiveness
Hoang Huy Hoang; Ron Schutz; Joseph B. Bernstein; Barbara Vasquez, Editor(s)

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