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Proceedings Paper

Dielectronic recombination of Li-like Si ion
Author(s): Huaguo Teng; Zhizhan Xu; Baifei Sheng; Wengqi Zhang
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Paper Abstract

The detailed level to level partial dielectronic recombination rate coefficients of Li-like Si ion through 2 pnl manfolds are calculated. These rate coefficients are presented by the average wavelength (lambda) and average absorption oscillator strengths f defined by P. L. Hagelstein. All calculations are made on the basis of Cowan's program (HFR).

Paper Details

Date Published: 10 September 1993
PDF: 6 pages
Proc. SPIE 1928, International Symposium on Laser-Plasma Interactions, (10 September 1993); doi: 10.1117/12.155774
Show Author Affiliations
Huaguo Teng, Shanghai Institute of Optics and Fine Mechanics (China)
Zhizhan Xu, Shanghai Institute of Optics and Fine Mechanics (China)
Baifei Sheng, Shanghai Institute of Optics and Fine Mechanics (China)
Wengqi Zhang, Shanghai Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 1928:
International Symposium on Laser-Plasma Interactions

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