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Proceedings Paper

Spatial characteristics of recombination X-ray lasers
Author(s): Peixiang Lu; Zhizhan Xu; Zhengquan Zhang; Pinzhong Fan
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Paper Abstract

The spatial distributions of lithiumlike SiXII ion and sodiumlike CuXIX ion recombination X- ray lasing gains are presented in this paper. It shows that the recombination X-ray lasing gain region is at hundreds of micrometers from the target surface and the electron density in the gain region is about 1019 cm-3 while there exists absorption near the target surface with higher electron density (> 1020 cm-3).

Paper Details

Date Published: 10 September 1993
PDF: 6 pages
Proc. SPIE 1928, International Symposium on Laser-Plasma Interactions, (10 September 1993); doi: 10.1117/12.155769
Show Author Affiliations
Peixiang Lu, Shanghai Institute of Optics and Fine Mechanics (China)
Zhizhan Xu, Shanghai Institute of Optics and Fine Mechanics (China)
Zhengquan Zhang, Shanghai Institute of Optics and Fine Mechanics (China)
Pinzhong Fan, Shanghai Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 1928:
International Symposium on Laser-Plasma Interactions

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